Effects of the doping level in the production of silicon nanowalls by metal assisted chemical etching
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چکیده
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چکیده ندارد.
15 صفحه اولNanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of silicon wafer.
The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...
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ژورنال
عنوان ژورنال: Materials Science in Semiconductor Processing
سال: 2020
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2020.105206